In situ characterisation of atomic layer deposition

Our home-built ALD reactors are designed so that we can monitor the ALD growth process in real time. This in situ capability enables rapid evaluation of film growth and detailed studies of reaction mechanisms. The following properties can be monitored during ALD using the in situ techniques that are currently available in the lab: 

  • The layer thickness, roughness and optical properties by in situ ellipsometry
  • The formed gaseous reaction products by in situ mass-spectroscopy
  • The chemistry of the surface groups by in situ FTIR
  • The plasma during PE-ALD by in situ optical emission spectroscopy

In addition to these lab-based techniques, we regularly use synchrotron radiation to study ALD growth.

© 2012-2015 CoCoon Research Department (works with IE7, firefox 3 or better). Drupal theme by Kiwi Themes.