Pt redistribution during Ni(Pt) silicide formation

Publication Type:

Journal Article

Source:

Applied Physics Letters, Volume 93, Number 26, p.- (2008)

ISBN:

0003-6951

Accession Number:

http://apps.isiknowledge.com/InboundService.do?Func=Frame&product=WOS&action=retrieve&SrcApp=EndNote&Init=Yes&SrcAuth=ResearchSoft&mode=FullRecord&UT=000262225700033

Keywords:

crystal orientation, diffusion barriers, films, grain boundaries, nickel alloys, nisi, platinum alloys, rutherford backscattering, rutherford backscattering data, silicon alloys, solid solubility, texture, thin films

Abstract:

We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni2Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni2Si grain boundaries, significantly slowing down the Ni2Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni1-xPtxSi film.

Notes:

391HZTimes Cited:9Cited References Count:9

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