Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Publication Type:

Journal Article

Source:

Applied Physics Letters, Volume 96, Number 17, p.- (2010)

ISBN:

0003-6951

Keywords:

annealing, chemical reactions, cmos, electrical conductivity transitions, electrical resistivity, nickel compounds, silicon-on-insulator, sputter deposition, thermal stability, thin films

Abstract:

The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 degrees C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 degrees C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 degrees C.

Notes:

590QLTimes Cited:3Cited References Count:12

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