Materials research for emerging non-volatile memories

Due to continuous scaling of memory devices (and electronics in general), new technologies are being investigated to replace the current memories when they reach their scaling limit. In resistive memories, the memory cells are switched between a high and low resistive state. Conductive Bridge RAM (CBRAM) is a novel resistive memory concept where a cell consists of three layers: a cation supply layer (e.g. Cu or Ag rich layer), a dielectric layer (e.g. Al2O3 or SiO2) and an electrochemical inert electrode (e.g. Pt or TiN). The switching is induced by growing/dissolving a conductive filament through the dielectric layer by applying a positive/negative bias on the cation supply layer. 

Schematic of a CBRAM cell, being cycled between a high and low resistive state.

The COCOON group has been involved in research on Cu-Te based cation supply layers (Goux et al., Appl. Phys. Lett., 2011, 99, 053502). Our research focuses on further optimization of this layer and on exploring new materials for application in CBRAM devices.

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