The influence of Pt redistribution on Ni1-xPtxSi growth properties

Publication Type:

Journal Article


Journal of Applied Physics, Volume 108, Number 4, p.- (2010)




algorithm, elements, expansion, mechanisms, ni-si system, phase-formation, reactive diffusion, rutherford backscattering data, thermal-stability, thin-films


We have studied the influence of Pt on the growth of Ni suicide thin films by examining the Pt redistribution during suicide growth. Three different initial Pt configurations were investigated, i.e., a Pt alloy (Ni+Pt/< Si >), a Pt capping layer (Pt/Ni/< Si >) and a Pt interlayer (Ni/Pt/< Si >), all containing 7 at. % Pt relative to the Ni content. The Pt redistribution was probed using in situ real-time Rutherford backscattering spectrometry (RBS) whereas the phase sequence was monitored during the solid phase reaction (SPR) using in situ real-time x-ray diffraction. We found that the capping layer and alloy exhibit a SPR comparable to the pure Ni/< Si > system, whereas Pt added as an interlayer has a much more drastic influence on the Ni suicide phase sequence. Nevertheless, for all initial sample configurations, Pt redistributes in an erratic way. This phenomenon can be assigned to the low solubility of Pt in Ni2Si compared to NiSi and the high mobility of Pt in Ni2Si compared to pure Ni. Real-time RBS further revealed that the crucial issue determining the growth properties of each silicide phase is the Pt concentration at the Si interface during the initial stages of phase formation. The formation of areas rich in Pt reduce the Ni suicide growth kinetics which influences the phase sequence and properties of the suicides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455873]


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