Journal papers

Found 194 results
Author Title Type [ Year(Asc)]
2007
Characterization of the texture of silicide films using electron backscattered diffraction, De Keyser, K., Detavernier Christophe, and Vanmeirhaeghe R. L. , Applied Physics Letters, Mar 19, Volume 90, Number 12, p.-, (2007)
Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements, Deduytsche, D., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Feb 15, Volume 101, Number 4, p.-, (2007)
Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer, Jiang, Y. L., Xie Q., Detavernier Christophe, Ru G. P., Qu X. P., Li B. Z., Chu P. K., and Vanmeirhaeghe R. L. , Journal of Applied Physics, Aug 1, Volume 102, Number 3, p.-, (2007)
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions, Opsomer, K., Deduytsche D., Detavernier Christophe, Vanmeirhaeghe R. L., Lauwers A., Maex K., and Lavoie C. , Applied Physics Letters, Jan 15, Volume 90, Number 3, p.-, (2007)
Kinetics of Ni3Si2 formation in the Ni2Si-NiSi thin film reaction from in situ measurements, Kittl, J. A., Pawlak M. A., Torregiani C., Lauwers A., Demeurisse C., Vrancken C., Absil P. P., Biesemans S., Detavernier Christophe, Jordan-Sweet J. L., et al. , Applied Physics Letters, Dec 3, Volume 91, Number 23, p.-, (2007)
Oxidation suppression in ytterbium silicidation by Ti/TiN bicapping layer, Jiang, Y. L., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., Ru G. P., Qu X. P., Li B. Z., Huang A. P., and Chu P. K. , Journal of Vacuum Science & Technology A, Mar-Apr, Volume 25, Number 2, p.285-289, (2007)
Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth, Iacopi, F., Vereecken P. M., Schaekers M., Caymax M., Moelans N., Blanpain B., Richard O., Detavernier Christophe, and Griffiths H. , Nanotechnology, Dec 19, Volume 18, Number 50, p.-, (2007)
Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium, Simoen, E., Opsomer K., Claeys C., Maex K., Detavernier Christophe, Vanmeirhaeghe R. L., and Clauws P. , Journal of the Electrochemical Society, Volume 154, Number 10, p.H857-H861, (2007)
Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates, Torregiani, C., Van Bockstael C., Detavernier Christophe, Lavoie C., Lauwers A., Maex K., and Kittl J. A. , Microelectronic Engineering, Nov, Volume 84, Number 11, p.2533-2536, (2007)
Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors, Leroy, W. P., Detavernier Christophe, Vanmeirhaeghe R. L., and Lavoie C. , Journal of Applied Physics, Mar 1, Volume 101, Number 5, p.-, (2007)
Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications, Kittl, J. A., Pawlak M. A., Torregiani C., Lauwers A., Demeurisse C., Vrancken C., Absil P. P., Biesemans S., Coia C., Detavernier Christophe, et al. , Applied Physics Letters, Oct 22, Volume 91, Number 17, p.-, (2007)
2006
Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium, Simoen, E., Opsomer K., Claeys C., Maex K., Detavernier Christophe, Vanmeirhaeghe R. L., Forment S., and Clauws P. , Applied Physics Letters, May 1, Volume 88, Number 18, p.-, (2006)
Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium, Simoen, E., Opsomer K., Claeys C., Maex K., Detavernier Christophe, Vanmeirhaeghe R. L., and Clauws P. , Applied Physics Letters, Nov 13, Volume 89, Number 20, p.-, (2006)
A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium, Opsomer, K., Simoen E., Claeys C., Maex K., Detavernier Christophe, Vanmeirhaeghe R. L., Forment S., and Clauws P. , Materials Science in Semiconductor Processing, Aug-Oct, Volume 9, Number 4-5, p.554-558, (2006)
Edge-to-edge matching in thin films, Detavernier, Christophe, and Lavoie C. , Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science, Mar, Volume 37A, Number 3A, p.851-855, (2006)
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films, Lavoie, C., Detavernier Christophe, Cabral C., d'Heurle F. M., Kellock A. J., Jordan-Sweet J. L., and Harper J. M. E. , Microelectronic Engineering, Nov-Dec, Volume 83, Number 11-12, p.2042-2054, (2006)
General discussion session of the 2004 Hume-Rothery Symposium on "The structure and diffusional growth mechanisms of irrational interphase boundaries", Muddle, B. C., Aaronson H. I., Kelly P. M., Srinivasan G. R., Kelly P. M., Laughlin D. E., Reynolds W. T., Braun M., Purdy G., Zhang W. Z., et al. , Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science, Mar, Volume 37A, Number 3A, p.961-974, (2006)
Linear growth of Ni2Si thin film on n+/p junction at low temperature, Jiang, Y. L., Ru G. P., Qu X. P., Li B. Z., Detavernier Christophe, and Vanmeirhaeghe R. L. , Journal of Materials Research, Dec, Volume 21, Number 12, p.3017-3021, (2006)
Reaction of thin Ni films with Ge: Phase formation and texture, Gaudet, S., Detavernier Christophe, Lavoie C., and Desjardins P. , Journal of Applied Physics, Aug 1, Volume 100, Number 3, p.-, (2006)
Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors, Leroy, W. P., Detavernier Christophe, Vanmeirhaeghe R. L., Kellock A. J., and Lavoie C. , Journal of Applied Physics, Mar 15, Volume 99, Number 6, p.-, (2006)
Thin film reaction of transition metals with germanium, Gaudet, S., Detavernier Christophe, Kellock A. J., Desjardins P., and Lavoie C. , Journal of Vacuum Science & Technology A, May-Jun, Volume 24, Number 3, p.474-485, (2006)

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