Journal papers

Found 191 results
Author Title Type [ Year(Asc)]
2010
Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition, Dendooven, J., Deduytsche D., Musschoot J., Vanmeirhaeghe R. L., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 157, Number 4, p.G111-G116, (2010)
The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films, Xie, Q., Jiang Y. L., De Keyser K., Detavernier Christophe, Deduytsche D., Ru G. P., Qu X. P., and Tu K. N. , Microelectronic Engineering, Dec, Volume 87, Number 12, p.2535-2539, (2010)
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Applied Physics a-Materials Science & Processing, Feb, Volume 98, Number 2, p.357-365, (2010)
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer, Xie, Q., Deduytsche D., Schaekers M., Caymax M., Delabie A., Qu X. P., and Detavernier Christophe , Applied Physics Letters, Sep 13, Volume 97, Number 11, p.-, (2010)
In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Journal of Materials Science-Materials in Electronics, Jan, Volume 21, Number 1, p.88-95, (2010)
In situ study of the formation of silicide phases in amorphous Co-Si mixed layers, Van Bockstael, C., De Keyser K., Demeulemeester J., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.282-285, (2010)
In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100), Knaepen, W., Demeulemeester J., Jordan-Sweet J. L., Vantomme A., Detavernier Christophe, Vanmeirhaeghe R. L., and Lavoie C. , Journal of Vacuum Science & Technology A, Jan, Volume 28, Number 1, p.20-26, (2010)
In situ X-ray diffraction study of thin film Ir/Si solid state reactions, Knaepen, W., Demeulemeester J., Deduytsche D., Jordan-Sweet J. L., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.258-262, (2010)
The influence of Pt redistribution on Ni1-xPtxSi growth properties, Demeulemeester, J., Smeets D., Comrie C. M., Van Bockstael C., Knaepen W., Detavernier Christophe, Temst K., and Vantomme A. , Journal of Applied Physics, Aug 15, Volume 108, Number 4, p.-, (2010)
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100), De Keyser, K., Van Bockstael C., Vanmeirhaeghe R. L., Detavernier Christophe, Verleysen E., Bender H., Vandervorst W., Jordan-Sweet J. L., and Lavoie C. , Applied Physics Letters, Apr 26, Volume 96, Number 17, p.-, (2010)
Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal-Insulator-Metal Capacitors Using TiN Bottom Electrode, Menou, N., Popovici M., Opsomer K., Kaczer B., Pawlak M. A., Adelmann C., Franquet A., Favia P., Bender H., Detavernier Christophe, et al. , Japanese Journal of Applied Physics, Volume 49, Number 4, p.-, (2010)
Texture of atomic layer deposited ruthenium, Musschoot, J., Xie Q., Deduytsche D., De Keyser K., Longrie D., Haemers J., Van den Berghe S., Vanmeirhaeghe R. L., D'Haen J., and Detavernier Christophe , Microelectronic Engineering, Oct, Volume 87, Number 10, p.1879-1883, (2010)
Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature, De Keyser, K., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Journal of the Electrochemical Society, Volume 157, Number 4, p.H395-H404, (2010)
Texture of CoSi2 films on Si(111), (110) and (001) substrates, De Keyser, K., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Thin Solid Films, Dec 1, Volume 519, Number 4, p.1277-1284, (2010)
Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices, Xie, Q., Musschoot J., Schaekers M., Caymax M., Delabie A., Qu X. P., Jiang Y. L., Van den Berghe S., Liu J. H., and Detavernier Christophe , Applied Physics Letters, Nov 29, Volume 97, Number 22, p.-, (2010)
2009
Atomic layer deposition of titanium nitride from TDMAT precursor, Musschoot, J., Xie Q., Deduytsche D., Van den Berghe S., Vanmeirhaeghe R. L., and Detavernier Christophe , Microelectronic Engineering, Jan, Volume 86, Number 1, p.72-77, (2009)
Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide, Musschoot, J., Deduytsche D., Poelman H., Haemers J., Vanmeirhaeghe R. L., Van den Berghe S., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 156, Number 7, p.P122-P126, (2009)
Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes, Menou, N., Popovici M., Clima S., Opsomer K., Polspoel W., Kaczer B., Rampelberg G., Tomida K., Pawlak M. A., Detavernier Christophe, et al. , Journal of Applied Physics, Nov 1, Volume 106, Number 9, p.-, (2009)
Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect, Hardy, A., Van Elshocht S., Knaepen W., D'Haen J., Conard T., Brijs B., Vandervorst W., Pourtois G., Kittl J., Detavernier Christophe, et al. , Journal of Materials Chemistry, Volume 19, Number 8, p.1115-1122, (2009)
Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition, Popovici, M., Delabie A., Van Elshocht S., Clima S., Pourtois G., Nyns L., Tomida K., Menou N., Opsomer K., Swerts J., et al. , Journal of the Electrochemical Society, Volume 156, Number 10, p.G145-G151, (2009)
High-k dielectrics for future generation memory devices (Invited Paper), Kittl, J. A., Opsomer K., Popovici M., Menou N., Kaczer B., Wang X. P., Adelmann C., Pawlak M. A., Tomida K., Rothschild A., et al. , Microelectronic Engineering, Jul-Sep, Volume 86, Number 7-9, p.1789-1795, (2009)
In situ study of the formation of silicide phases in amorphous Ni-Si mixed layers, Van Bockstael, C., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Sep 15, Volume 106, Number 6, p.-, (2009)
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium, Knaepen, W., Gaudet S., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Apr 15, Volume 105, Number 8, p.-, (2009)

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