Journal papers

Found 73 results
Author Title Type [ Year(Asc)]
Filters: Author is R. L Vanmeirhaeghe  [Clear All Filters]
2010
Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition, Dendooven, J., Deduytsche D., Musschoot J., Vanmeirhaeghe R. L., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 157, Number 4, p.G111-G116, (2010)
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Applied Physics a-Materials Science & Processing, Feb, Volume 98, Number 2, p.357-365, (2010)
In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Journal of Materials Science-Materials in Electronics, Jan, Volume 21, Number 1, p.88-95, (2010)
In situ study of the formation of silicide phases in amorphous Co-Si mixed layers, Van Bockstael, C., De Keyser K., Demeulemeester J., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.282-285, (2010)
In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100), Knaepen, W., Demeulemeester J., Jordan-Sweet J. L., Vantomme A., Detavernier Christophe, Vanmeirhaeghe R. L., and Lavoie C. , Journal of Vacuum Science & Technology A, Jan, Volume 28, Number 1, p.20-26, (2010)
In situ X-ray diffraction study of thin film Ir/Si solid state reactions, Knaepen, W., Demeulemeester J., Deduytsche D., Jordan-Sweet J. L., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.258-262, (2010)
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100), De Keyser, K., Van Bockstael C., Vanmeirhaeghe R. L., Detavernier Christophe, Verleysen E., Bender H., Vandervorst W., Jordan-Sweet J. L., and Lavoie C. , Applied Physics Letters, Apr 26, Volume 96, Number 17, p.-, (2010)
Texture of atomic layer deposited ruthenium, Musschoot, J., Xie Q., Deduytsche D., De Keyser K., Longrie D., Haemers J., Van den Berghe S., Vanmeirhaeghe R. L., D'Haen J., and Detavernier Christophe , Microelectronic Engineering, Oct, Volume 87, Number 10, p.1879-1883, (2010)
Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature, De Keyser, K., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Journal of the Electrochemical Society, Volume 157, Number 4, p.H395-H404, (2010)
2009
Atomic layer deposition of titanium nitride from TDMAT precursor, Musschoot, J., Xie Q., Deduytsche D., Van den Berghe S., Vanmeirhaeghe R. L., and Detavernier Christophe , Microelectronic Engineering, Jan, Volume 86, Number 1, p.72-77, (2009)
Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide, Musschoot, J., Deduytsche D., Poelman H., Haemers J., Vanmeirhaeghe R. L., Van den Berghe S., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 156, Number 7, p.P122-P126, (2009)
In situ study of the formation of silicide phases in amorphous Ni-Si mixed layers, Van Bockstael, C., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Sep 15, Volume 106, Number 6, p.-, (2009)
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium, Knaepen, W., Gaudet S., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Apr 15, Volume 105, Number 8, p.-, (2009)
Influence of a transient hexagonal phase on the microstructure and morphological stability of NiSi films, Van Bockstael, C., De Keyser K., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Applied Physics Letters, Jan 19, Volume 94, Number 3, p.-, (2009)
Modeling the Conformality of Atomic Layer Deposition: The Effect of Sticking Probability, Dendooven, J., Deduytsche D., Musschoot J., Vanmeirhaeghe R. L., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 156, Number 4, p.P63-P67, (2009)
Ru thin film grown on TaN by plasma enhanced atomic layer deposition, Xie, Q., Jiang Y. L., Musschoot J., Deduytsche D., Detavernier Christophe, Vanmeirhaeghe R. L., Van den Berghe S., Ru G. P., Li B. Z., and Qu X. P. , Thin Solid Films, Jun 30, Volume 517, Number 16, p.4689-4693, (2009)
THE TEXTURE OF THIN NiSi FILMS AND ITS EFFECT ON AGGLOMERATION, De Keyser, K., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Applications of Texture Analysis, Volume 201, p.3-10818, (2009)
2008
Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma, Xie, Q., Musschoot J., Detavernier Christophe, Deduytsche D., Vanmeirhaeghe R. L., Van den Berghe S., Jiang Y. L., Ru G. P., Li B. Z., and Qu X. P. , Microelectronic Engineering, Oct, Volume 85, Number 10, p.2059-2063, (2008)
Effect of Pt addition on growth stress and thermal stress of NiSi films, Van Bockstael, C., De Keyser K., Deduytsche D., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Journal of Applied Physics, Sep 1, Volume 104, Number 5, p.-, (2008)
Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts, Gullu, O., Biber M., Vanmeirhaeghe R. L., and Turut A. , Thin Solid Films, Sep 1, Volume 516, Number 21, p.7851-7856, (2008)
Epitaxial formation of a metastable hexagonal nickel-silicide, De Keyser, K., Van Bockstael C., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Electrochemical and Solid State Letters, Volume 11, Number 9, p.H266-H268, (2008)
Formation and stability of NiSi in the presence of Co and Fe alloying elements, Deduytsche, D., Detavernier Christophe, Vanmeirhaeghe R. L., Jordan-Sweet J. L., and Lavoie C. , Journal of Vacuum Science & Technology B, Nov, Volume 26, Number 6, p.1971-1977, (2008)
Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition, Xie, Q., Musschoot J., Deduytsche D., Vanmeirhaeghe R. L., Detavernier Christophe, Van den Berghe S., Jiang Y. L., Ru G. P., Li B. Z., and Qu X. P. , Journal of the Electrochemical Society, Volume 155, Number 9, p.H688-H692, (2008)

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