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2011
TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition, Xie, Q., Deduytsche D., Musschoot J., Vanmeirhaeghe R. L., Detavernier Christophe, Ding S. F., and Qu X. P. , Microelectronic Engineering, May, Volume 88, Number 5, p.646-650, (2011)
Phase formation and texture of nickel silicides on Si1-xCx epilayers, De Keyser, K., De Schutter B., Detavernier Christophe, Machkaoutsan V., Bauer M., Thomas S. G., Jordan-Sweet J. L., and Lavoie C. , Microelectronic Engineering, May, Volume 88, Number 5, p.536-540, (2011)
In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO(2) on Si and Ge substrates, Devloo-Casier, K., Dendooven J., Ludwig KF, Lekens G., D'Haen J., and Detavernier Christophe , APPLIED PHYSICS LETTERS, JUN 6, Volume 98, Number 23, (2011)
Embedding Quantum Dot Monolayers in Al2O3 Using Atomic Layer Deposition, Lambert, K., Dendooven J., Detavernier Christophe, and Hens Z. , Chemistry of Materials, Jan 25, Volume 23, Number 2, p.126-+, (2011)
In Situ X-ray Fluorescence Measurements During Atomic Layer Deposition: Nucleation and Growth of TiO2 on Planar Substrates and in Nanoporous Films, Dendooven, J., Sree SP, De Keyser K., Deduytsche D., Martens JA, Ludwig KF, and Detavernier Christophe , Journal of Physical Chemistry C, Apr 14, Volume 115, Number 14, p.6605-6610, (2011)
Aluminium atomic layer deposition applied to mesoporous zeolites for acid catalytic activity enhancement, Pulinthanathu Sree, S., Dendooven J., Koranyi T. I., Vanbutsele G., Houthoofd K., Deduytsche D., Detavernier Christophe, and Martens JA , Catalysis Science & Technology, 2011, Volume 1, Issue 2, p.218 - 221, (2011)
Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabs, Pulinthanathu Sree, S., Dendooven J., Smeets D., Deduytsche D., Aerts A., Vanstreels K., Baklanov M. R., Seo J. W., Temst K., Vantomme A., et al. , Journal of Materials Chemistry, 2011, Volume 21, Issue 21, p.7692 - 7699, (2011)
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices, Deng, Shaoren, Xie Qi, Deduytsche Davy, Schaekers Marc, Lin Dennis, Caymax Matty, Delabie Annelies, den Berghe Sven Van, Qu Xinping, and Detavernier Christophe , Applied Physics Letters, 08/2011, Volume 99, Number 052906, (2011)
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer, Xie, Q., Musschoot J., Schaekers M., Caymax M., Delabie A., Lin D., Qu X. P., Jiang Y. L., Van den Berghe S., and Detavernier Christophe , Electrochemical and Solid State Letters, Volume 14, Number 5, p.G27-G30, (2011)
Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma, Xie, Q., Deduytsche D., Schaekers M., Caymax M., Delabie A., Qu X. P., and Detavernier Christophe , Electrochemical and Solid State Letters, Volume 14, Number 5, p.G20-G22, (2011)
2010
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer, Xie, Q., Deduytsche D., Schaekers M., Caymax M., Delabie A., Qu X. P., and Detavernier Christophe , Applied Physics Letters, Sep 13, Volume 97, Number 11, p.-, (2010)
Texture of atomic layer deposited ruthenium, Musschoot, J., Xie Q., Deduytsche D., De Keyser K., Longrie D., Haemers J., Van den Berghe S., Vanmeirhaeghe R. L., D'Haen J., and Detavernier Christophe , Microelectronic Engineering, Oct, Volume 87, Number 10, p.1879-1883, (2010)
Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices, Xie, Q., Musschoot J., Schaekers M., Caymax M., Delabie A., Qu X. P., Jiang Y. L., Van den Berghe S., Liu J. H., and Detavernier Christophe , Applied Physics Letters, Nov 29, Volume 97, Number 22, p.-, (2010)
In situ study of the formation of silicide phases in amorphous Co-Si mixed layers, Van Bockstael, C., De Keyser K., Demeulemeester J., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.282-285, (2010)
In situ X-ray diffraction study of thin film Ir/Si solid state reactions, Knaepen, W., Demeulemeester J., Deduytsche D., Jordan-Sweet J. L., Vantomme A., Vanmeirhaeghe R. L., Detavernier Christophe, and Lavoie C. , Microelectronic Engineering, Mar, Volume 87, Number 3, p.258-262, (2010)
In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100), Knaepen, W., Demeulemeester J., Jordan-Sweet J. L., Vantomme A., Detavernier Christophe, Vanmeirhaeghe R. L., and Lavoie C. , Journal of Vacuum Science & Technology A, Jan, Volume 28, Number 1, p.20-26, (2010)
In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Journal of Materials Science-Materials in Electronics, Jan, Volume 21, Number 1, p.88-95, (2010)
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction, Chen, T., Liu S. Y., Xie Q., Detavernier Christophe, Vanmeirhaeghe R. L., and Qu X. P. , Applied Physics a-Materials Science & Processing, Feb, Volume 98, Number 2, p.357-365, (2010)
Texture of CoSi2 films on Si(111), (110) and (001) substrates, De Keyser, K., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Thin Solid Films, Dec 1, Volume 519, Number 4, p.1277-1284, (2010)
The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films, Xie, Q., Jiang Y. L., De Keyser K., Detavernier Christophe, Deduytsche D., Ru G. P., Qu X. P., and Tu K. N. , Microelectronic Engineering, Dec, Volume 87, Number 12, p.2535-2539, (2010)
The influence of Pt redistribution on Ni1-xPtxSi growth properties, Demeulemeester, J., Smeets D., Comrie C. M., Van Bockstael C., Knaepen W., Detavernier Christophe, Temst K., and Vantomme A. , Journal of Applied Physics, Aug 15, Volume 108, Number 4, p.-, (2010)
Phase formation and thermal stability of ultrathin nickel-silicides on Si(100), De Keyser, K., Van Bockstael C., Vanmeirhaeghe R. L., Detavernier Christophe, Verleysen E., Bender H., Vandervorst W., Jordan-Sweet J. L., and Lavoie C. , Applied Physics Letters, Apr 26, Volume 96, Number 17, p.-, (2010)
Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal-Insulator-Metal Capacitors Using TiN Bottom Electrode, Menou, N., Popovici M., Opsomer K., Kaczer B., Pawlak M. A., Adelmann C., Franquet A., Favia P., Bender H., Detavernier Christophe, et al. , Japanese Journal of Applied Physics, Volume 49, Number 4, p.-, (2010)
Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition, Dendooven, J., Deduytsche D., Musschoot J., Vanmeirhaeghe R. L., and Detavernier Christophe , Journal of the Electrochemical Society, Volume 157, Number 4, p.G111-G116, (2010)
Texture of Cobalt Germanides on Ge(100) and Ge(111) and Its Influence on the Formation Temperature, De Keyser, K., Vanmeirhaeghe R. L., Detavernier Christophe, Jordan-Sweet J. L., and Lavoie C. , Journal of the Electrochemical Society, Volume 157, Number 4, p.H395-H404, (2010)

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